? semiconductor components industries, llc, 2013 july , 2013 ? rev . 5 1 publication order number: mbt3906dw1t1/d mbt3906dw1, SMBT3906DW1 dual general purpose t ransistor the mbt3906dw1 device is a spin ? of f of our popular sot ? 23/sot ? 323 three ? leaded device. it is designed for general purpose amplifier applications and is housed in the sot ? 363 six ? leaded surface mount package. by putting two discrete devices in one package, this device is ideal for low ? power surface mount applications where board space is at a premium. features ? h fe , 100 ? 300 ? low v ce(sat) , 0.4 v ? simplifies circuit design ? reduces board space ? reduces component count ? a vailable in 8 mm, 7 ? inch/3,000 unit t ape and reel ? s prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and pp ap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* maximum ra tings rating symbol value unit collector ? emitter voltage v ceo ? 40 vdc collector ? base voltage v cbo ? 40 vdc emitter ? base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 200 madc electrostatic discharge esd hbm class 2 mm class b stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only . functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability . thermal characteristics characteristic symbol max unit total package dissipation (note 1) t a = 25 c p d 150 mw thermal resistance, junction ? to ? ambient r ja 833 c/w junction and storage temperature range t j , t stg ? 55 to +150 c 1. device mounted on fr4 glass epoxy printed circuit board using the minimum recommended footprint. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information sot ? 363/sc ? 88 case 419b style 1 q 1 (1) (2) (3) (4) (5) (6) q 2 mbt3906dw1t1g sot ? 363 (pb ? free) 3,000 / t ape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. marking diagram a2 = device code m = date code = pb ? free package a2 m 1 6 http://onsemi.com (note: microdot may be in either location) SMBT3906DW1t1g sot ? 363 (pb ? free) 3,000 / t ape & reel mbt3906dw1t2g sot ? 363 (pb ? free) 3,000 / t ape & reel http://
mbt3906dw1, SMBT3906DW1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 2) v (br)ceo ? 40 ? vdc collector ? base breakdown voltage v (br)cbo ? 40 ? vdc emitter ? base breakdown voltage v (br)ebo ? 5.0 ? vdc base cutoff current i bl ? ? 50 nadc collector cutoff current i cex ? ? 50 nadc on characteristics (note 2) dc current gain (i c = ? 0.1 madc, v ce = ? 1.0 vdc) (i c = ? 1.0 madc, v ce = ? 1.0 vdc) (i c = ? 10 madc, v ce = ? 1.0 vdc) (i c = ? 50 madc, v ce = ? 1.0 vdc) (i c = ? 100 madc, v ce = ? 1.0 vdc) h fe 60 80 100 60 30 ? ? 300 ? ? ? collector ? emitter saturation v oltage (i c = ? 10 madc, i b = ? 1.0 madc) (i c = ? 50 madc, i b = ? 5.0 madc) v ce(sat) ? ? ? 0.25 ? 0.4 vdc base ? emitter saturation v oltage (i c = ? 10 madc, i b = ? 1.0 madc) (i c = ? 50 madc, i b = ? 5.0 madc) v be(sat) ? 0.65 ? ? 0.85 ? 0.95 vdc small ? signal characteristics current ? gain ? bandwidth product f t 250 ? mhz output capacitance c obo ? 4.5 pf input capacitance c ibo ? 10.0 pf input impedance (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) h ie 2.0 12 k v oltage feedback ratio (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) h re 0.1 10 x 10 ? 4 small ? signal current gain (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) h fe 100 400 ? output admittance (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) h oe 3.0 60 mhos noise figure (v ce = ? 5.0 vdc, i c = ? 100 adc, r s = 1.0 k , f = 1.0 khz) nf ? 4.0 db switching characteristics delay time (v cc = ? 3.0 vdc, v be = 0.5 vdc) t d ? 35 ns rise time (i c = ? 10 madc, i b1 = ? 1.0 madc) t r ? 35 storage time (v cc = ? 3.0 vdc, i c = ? 10 madc) t s ? 225 ns fall time (i b1 = i b2 = ? 1.0 madc) t f ? 75 2. pulse test: pulse width 300 s; duty cycle 2.0%.
mbt3906dw1, SMBT3906DW1 http://onsemi.com 3 figure 1. delay and rise t ime equivalent t est circuit figure 2. storage and fall t ime equivalent t est circuit 3 v 275 10 k 1n916 c s < 4 pf* 3 v 275 10 k c s < 4 pf* < 1 ns +0.5 v 10.6 v 300 ns duty cycle = 2% < 1 ns +9.1 v 10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * t otal shunt capacitance of test jig and connectors typical transient characteristics figure 3. capacitance reverse bias (vol ts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 4. charge data i c , collect or current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 cap acit ance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25 c t j = 125 c figure 5. turn ? on time i c , collect or current (ma) 70 100 200 300 500 50 time (ns) 1.0 2.0 3.0 10 20 70 5 100 figure 6. fall t ime i c , collect or current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 t , f all time (ns) f v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v
mbt3906dw1, SMBT3906DW1 http://onsemi.com 4 typical audio small ? signal characteristics noise figure v aria tions (v ce = ? 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 7. f, frequency (khz) 2.0 3.0 4.0 5.0 1.0 0.1 figure 8. r g , source resist ance (k ohms) 0 nf , noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf , noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 2.0 k i c = 100 a source resistance = 2.0 k i c = 50 a h p arameters (v ce = ? 10 vdc, f = 1.0 khz, t a = 25 c) figure 9. current gain i c , collect or current (ma) 70 100 200 300 50 figure 10. output admittance i c , collect or current (ma) h , dc current gain h , output admitt ance ( mhos) figure 1 1. input impedance i c , collect or current (ma) figure 12. v oltage feedback ratio i c , collect or current (ma) 30 100 50 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 7 5 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe 70 30 0.7 7.0 0.7 7.0 7.0 3.0 0.7 0.3 0.7 7.0 0.7 7.0 h , voltage feedback ratio (x 10 ) re -4
mbt3906dw1, SMBT3906DW1 http://onsemi.com 5 typical st a tic characteristics figure 13. dc current gain i c , collect or current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c -55 c figure 14. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collect or emitter vol t age (vol ts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma figure 15. ?on? voltages i c , collect or current (ma) 0.4 0.6 0.8 1.0 0.2 figure 16. t emperature coefficients i c , collect or current (ma) v , vol t age (vol ts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 -1.0 -1.5 -2.0 200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1.0 v +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(s a t ) vb for v be(sat) , tempera ture coefficients (mv/ c) v
mbt3906dw1, SMBT3906DW1 http://onsemi.com 6 p ackage dimensions sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue y style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 notes: 1. dimensioning and t olerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimensions d and e1 do not include mold flash, protrusions, or ga te burrs. mold flash, protru- sions, or ga te burrs shall not exceed 0.20 per end. 4. dimensions d and e1 a t the outermost extremes of the plastic body and da tum h. 5. da tums a and b are determined a t da tum h. 6. dimensions b and c appl y t o the fla t section of the lead between 0.08 and 0.15 from the tip . 7. dimension b does not include dambar protrusion. allow able dambar protrusion shall be 0.08 t ot al in excess of dimension b a t maximum ma terial condi- tion. the dambar cannot be loca ted on the lower radius of the foot . c ddd m 123 a1 a c 654 e b 6x dim min nom max millimeters a ??? ??? 1.10 a1 0.00 ??? 0.10 ddd b 0.15 0.20 0.25 c 0.08 0.15 0.22 d 1.80 2.00 2.20 ??? ??? 0.043 0.000 ??? 0.004 0.006 0.008 0.010 0.003 0.006 0.009 0.070 0.078 0.086 min nom max inches 0.10 0.004 e1 1.15 1.25 1.35 e 0.65 bsc l 0.26 0.36 0.46 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.010 0.014 0.018 0.078 0.082 0.086 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting t e chniques reference manual, solderrm/d. soldering footprint* 0.65 0.66 6x dimensions: millimeters 0.30 pitch 2.50 6x recommended t o p view side view end view bbb h b sea ting plane detail a e a2 0.70 0.90 1.00 0.027 0.035 0.039 l2 0.15 bsc 0.006 bsc aaa 0.15 0.006 bbb 0.30 0.012 ccc 0.10 0.004 a-b d aaa c 2x 3 tips d e1 d e a 2x aaa h d 2x d l plane det ail a h gage l2 c ccc c a2 6x on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice t o any products herein. scillc makes no warranty , representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability , including wi thout limitation special, consequential or incidental damages. ?t ypical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in dif ferent application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer ?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur . should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly , any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/af firmative action employer . this literature is subject to all applicable copyright laws and is not for resale in any manner . publica tion ordering informa tion n. american t echnical support : 800 ? 282 ? 9855 t oll free usa/canada europe, middle east and africa t echnical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mbt3906dw1t1/d litera ture fulfillment : literature distribution center for on semiconductor p .o. box 5163, denver , colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 t oll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 t oll free usa/canada email : orderlit@onsemi.com on semiconductor w ebsite : www .onsemi.com order literature : http://www .onsemi.com/orderlit for additional information, please contact your local sales representative
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